Full metadata record
DC pole | Hodnota | Jazyk |
---|---|---|
dc.contributor.author | Kadlečíková, M. | |
dc.contributor.author | Vančo, Ĺ | |
dc.contributor.author | Breza, J. | |
dc.contributor.author | Priesol, J. | |
dc.contributor.author | Šatka, A. | |
dc.contributor.editor | Pihera, Josef | |
dc.contributor.editor | Steiner, František | |
dc.date.accessioned | 2019-02-21T12:47:35Z | |
dc.date.available | 2019-02-21T12:47:35Z | |
dc.date.issued | 2018 | |
dc.identifier.citation | Electroscope. 2018, č. 1. | cs |
dc.identifier.issn | 1802-4564 | |
dc.identifier.uri | http://147.228.94.30/images/PDF/Rocnik2018/Cislo1_2018/r12c1c15.pdf | |
dc.identifier.uri | http://hdl.handle.net/11025/31008 | |
dc.description.sponsorship | We are grateful to the scientific grant agency of the Ministry of Education, Science, Research and Sport of the Slovak Republic for financial support of project VEGA No. 1/0947/16. | en |
dc.format | 2 s. | cs |
dc.format.mimetype | application/pdf | |
dc.language.iso | en | en |
dc.publisher | Západočeská univerzita v Plzni, Fakulta elektrotechnická | cs |
dc.relation.ispartofseries | Electroscope | cs |
dc.rights | Copyright © 2018 Electroscope. All Rights Reserved. | en |
dc.subject | Ramanova spektroskopie | cs |
dc.subject | mikroelektronické struktury | cs |
dc.subject | tenké vrstvy | cs |
dc.subject | zkoušení materiálu | cs |
dc.title | Raman spectroscopy used to assess the temperature and mechanical stress in thin films of microelectronic structures | en |
dc.type | článek | cs |
dc.type | article | en |
dc.rights.access | openAccess | en |
dc.type.version | publishedVersion | en |
dc.description.abstract-translated | In this experimental work we examined the temperature and mechanical stress in the thin films of microelectronic structures based on GaN and AlN by Raman spectroscopy. The rise in temperature in the Raman spectrum is shown by shifting the Raman bands toward lower wavenumbers. Similarly like with changes of temperature, the changes of the positions of Raman bands may indicate the changes of mechanical stress in the structure. It was confirmed experimentally that in the case of tensile stress the Raman bands are shifted towards lower wavenumbers, and under compressive stress to higher wavenumbers. | en |
dc.subject.translated | Raman spectroscopy | en |
dc.subject.translated | microelectronic structures | en |
dc.subject.translated | thin films | en |
dc.subject.translated | material testing | en |
dc.type.status | Peer-reviewed | en |
Vyskytuje se v kolekcích: | Číslo 1 (2018) Číslo 1 (2018) |
Soubory připojené k záznamu:
Soubor | Popis | Velikost | Formát | |
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r12c1c15.pdf | Plný text | 328,29 kB | Adobe PDF | Zobrazit/otevřít |
Použijte tento identifikátor k citaci nebo jako odkaz na tento záznam:
http://hdl.handle.net/11025/31010
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