Full metadata record
| DC pole | Hodnota | Jazyk |
|---|---|---|
| dc.contributor.author | Neumann, P. | |
| dc.date.accessioned | 2021-01-04T08:22:47Z | |
| dc.date.available | 2021-01-04T08:22:47Z | |
| dc.date.issued | 2020 | |
| dc.identifier.citation | Electroscope. 2020, č. 1. | cs |
| dc.identifier.issn | 1802-4564 | |
| dc.identifier.uri | http://147.228.94.30/images/PDF/Rocnik2020/Cislo1_2020/r14c1c8.pdf | |
| dc.identifier.uri | http://hdl.handle.net/11025/42295 | |
| dc.description.sponsorship | This work was supported by the Ministry of Education, Youth and Sports of the Czech Republic within the National Sustainability Programme project No. LO1303 (MSMT-7778/2014),and by the European Regional Development Fund under the project CEBIA-Tech No. CZ.1.05/2.1.00/03.0089 | en |
| dc.format | 5 s. | cs |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en | en |
| dc.rights | © 2020 Electroscope | en |
| dc.subject | analýza | cs |
| dc.subject | tranzistory | cs |
| dc.subject | rentgenová analýza | cs |
| dc.subject | MOSFET tranzistory | cs |
| dc.title | Motor Control Power Transistor Authenticity Analysis | en |
| dc.type | článek | cs |
| dc.type | article | en |
| dc.rights.access | openAccess | en |
| dc.type.version | publishedVersion | en |
| dc.description.abstract-translated | he range of genuine electronic components both in active production and out of active production (obsolete) corresponds almost exactly with the range of fake components we can encounter on the market in common. Most risky deals are price “attractive” purchases via internet or from unknown sources via many resellers having no traceability to present to the customer. One such situation relates to our recent analysis of power MOSFET transistors assembled in a motor control application. Our goal was to reveal if transistor samples presented to us are bearing features of counterfeiting activities. The procedure applied for genuine origin assessment encompassed the optical analysis of component package marking, X-ray analysis, and IV characteristic comparison with reference component as well. The paper brings description of evaluation steps and a conclusion as well. The article accompanies illustrating pictures and diagrams. | en |
| dc.subject.translated | analysis | en |
| dc.subject.translated | tranzistors | en |
| dc.subject.translated | X-ray analysis | en |
| dc.subject.translated | MOSFET transistors | en |
| dc.type.status | Peer-reviewed | en |
| Vyskytuje se v kolekcích: | Číslo 1 (2020) Číslo 1 (2020) | |
Soubory připojené k záznamu:
| Soubor | Popis | Velikost | Formát | |
|---|---|---|---|---|
| r14c1c8.pdf | Plný text | 1,22 MB | Adobe PDF | Zobrazit/otevřít |
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