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DC poleHodnotaJazyk
dc.contributor.authorGodara, Balwant
dc.contributor.authorFabre, Alain
dc.contributor.editorPihera, Josef
dc.contributor.editorSteiner, František
dc.date.accessioned2012-09-24T09:04:53Z
dc.date.available2012-09-24T09:04:53Z
dc.date.issued2008
dc.identifier.citationElectroscope. 2008, č. 3.cs
dc.identifier.issn1802-4564
dc.identifier.urihttp://147.228.94.30/images/PDF/Rocnik2008/cislo3_2008/r2c3c7.pdf
dc.identifier.urihttp://hdl.handle.net/11025/463
dc.format7 s.cs
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherZápadočeská univerzita v Plzni, Fakulta elektrotechnickács
dc.relation.ispartofseriesElectroscopecs
dc.rightsCopyright © 2007-2010 Electroscope. All Rights Reserved.en
dc.subjectradiofrekvenční aplikacecs
dc.subjectSiGe BiCMOScs
dc.subjectproudové konvejorycs
dc.titleThe first active tunable wideband impedance matching circuiten
dc.typečlánekcs
dc.typearticleen
dc.rights.accessopenAccessen
dc.type.versionpublishedVersionen
dc.description.abstract-translatedThe first transistor-based impedance matching circuit for radio-frequency (RF) applications is introduced in this paper. It adapts arbitrary output impedances of RF blocks to desired values between 50ohmand 250ohm, from 0 to 5GHz, while occupying only 0.005mm² of circuit area in a 0.35μm SiGe BiCMOS process. Its superiority over traditional passive-element networks can be resumed by the following facts: flexible performance without the need for redesigning the components; adaptation of arbitrary impedances to desired values by the simple means of biasing current; extremely small form factors (the smallest observed); and matching over several gigahertz. Application to a low-noise amplifier validates the new topology.en
dc.subject.translatedradio-frequency applicationsen
dc.subject.translatedcurrent conveyorsen
dc.subject.translatedSiGe BiCMOSen
dc.type.statusPeer-revieweden
Vyskytuje se v kolekcích:Číslo 3 (2008)
Číslo 3 (2008)

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