Title: Reactions of nickel-based ohmic contacts with n-type 4H silicon carbide
Authors: Barda, Bohumil
Macháč, Petr
Citation: Electroscope. 2009, Konference EDS 2009.
Issue Date: 2009
Publisher: Západočeská univerzita v Plzni, Fakulta elektrotechnická
Document type: článek
konferenční příspěvek
ISSN: 1802-4564
Keywords: niklové ohmické kontakty;4H-SiC;elektrotechnická diagnostika
Keywords in different language: nickel-based ohmic contacts;4H-SiC;electrical diagnostics
Abstract in different language: We directly compared three nickel-based metallizations on Si-face of n-type 4H-SiC: pure nickel and nickel silicides prepared by the evaporation of nickel and silicon layers with overall composition corresponding to NiSi and Ni2Si. The degree of interaction between the metallizations and silicon carbide was determined by the AFM (Atomic Force Microscopy) scanning of the SiC substrate after the selective etching of the metallizations. The optimal annealing temperature was 960°C for all the metallizations; the values of contact resistivity were 6–7×10-5  cm2. The morphology of Ni (50 nm) contacts was free of defects at all annealing temperatures, but the reaction during annealing consumed approximately 60 nm of SiC. NiSi and Ni2Si metallizations altered the surface of the SiC substrate, but no significant decomposition was detected by AFM. NiSi contacts had unsatisfactory droplet-like morphology after annealing at 960 and 1065°C. Annealed Ni2Si contacts contained pores, but their formation was prevented by increasing the heating up rate of annealing. Due to suppressed interaction with SiC and good morphology, Ni2Si is the most suitable metallization for shallow silicon carbide structures.
Rights: Copyright © 2007-2010 Electroscope. All Rights Reserved.
Appears in Collections:Konference EDS 2009
EDS 2009 (2009)

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