Full metadata record
DC FieldValueLanguage
dc.contributor.authorŠkarvada, Pavel
dc.contributor.authorTománek, Pavel
dc.contributor.authorPalai-Dany, Tomáš
dc.contributor.editorPihera, Josef
dc.contributor.editorSteiner, František
dc.date.accessioned2012-11-06T13:48:39Z
dc.date.available2012-11-06T13:48:39Z
dc.date.issued2011
dc.identifier.citationElectroscope. 2011, č. 2, EEICT 2011.cs
dc.identifier.issn1802-4564
dc.identifier.urihttp://147.228.94.30/images/PDF/Rocnik2011/Cislo2_2011/r5c2c8.pdf
dc.identifier.urihttp://hdl.handle.net/11025/601
dc.format5 s.cs
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherZápadočeská univerzita v Plzni, Fakulta elektrotechnickács
dc.relation.ispartofseriesElectroscopecs
dc.rightsCopyright © 2007-2010 Electroscope. All Rights Reserved.en
dc.subjectsolární článkycs
dc.subjectumělé vadycs
dc.titleArtificial defects of solar cellsen
dc.typekonferenční příspěvekcs
dc.typeconferenceObjecten
dc.rights.accessopenAccessen
dc.type.versionpublishedVersionen
dc.description.abstract-translatedArtificial defects of solar cells are observable with laser beam induced current techniques. Reversed bias solar cell light emission can also reveal structure inhomogenity and local mechanical damage of the sample. The paper shows simple method for basic classification into structure group and artificial defects group. Observed artificial defects are shown and process of its creation is described. Defects classification method is based on the measurement of light emission at fixed reverse voltage while the temperature of sample is changing in the range of 20 K. There is different light emission temperature dependence in the case of bulk defects and mechanical damage defects. Experimental light emission data are consequently correlated with laser beam induced current map.en
dc.subject.translatedsolar cellsen
dc.subject.translatedartificial defectsen
dc.type.statusPeer-revieweden
Appears in Collections:Číslo 2 - EEICT 2011 (2011)
Číslo 2 - EEICT 2011 (2011)

Files in This Item:
File Description SizeFormat 
r5c2c8.pdf349,07 kBAdobe PDFView/Open


Please use this identifier to cite or link to this item: http://hdl.handle.net/11025/601

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.