Full metadata record
DC FieldValueLanguage
dc.contributor.authorKošek, Miloslav
dc.contributor.authorRichter, Aleš
dc.contributor.authorMikolanda, Tomáš
dc.contributor.editorUlrych, Bohuš
dc.date.accessioned2017-03-31T09:36:03Z
dc.date.available2017-03-31T09:36:03Z
dc.date.issued2007
dc.identifier.citationAMTEE ’07 : seventh international conference on Advanced Methods in the Theory of Electrical Engineering : September 10-12, 2007 [Pilsen, Czech Republic].en
dc.identifier.isbn978-80-7043-564-9
dc.identifier.urihttp://amtee.zcu.cz/AMTEE/ArchivedProceedings/proceedings_AMTEE_2007/data/section_i.html
dc.identifier.urihttp://hdl.handle.net/11025/25788
dc.format7 s.cs
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherUniversity of West Bohemiaen
dc.rights© University of West Bohemiaen
dc.subjectHallův efektcs
dc.subjectteorie elektronového plynucs
dc.subjectlineární ekvivalentní obvodcs
dc.subjectpolovodičové parametrycs
dc.titleEquivalent circuit of Hall effect generatoren
dc.typekonferenční příspěvekcs
dc.typeconferenceObjecten
dc.rights.accessopenAccessen
dc.type.versionpublishedVersionen
dc.description.abstract-translatedNow Hall Effect devices are used in many technical applications, but the full effect description is only in special literature. In the paper the microscopic theory based on classical electron gas model is presented and linear equivalent circuit of Hall generator is derived from the model. Extensive numerical simulation of practical devices results in a full set of device parameters and a lot of characteristics. Numerical results reveal that Hall generator is a soft source of low voltage and produces very small output current and power. It follows from the characteristics that driving constant current source in not necessary at standard conditions and can be replaced by a more convenient constant voltage source. It is shown that the heat production in probe of small size limits the value of electrical parameters and is the main problem in applications. Presented graphs show that the parameters of Hall probe depend strongly on semiconductor impurity doping.en
dc.subject.translatedHallův effecten
dc.subject.translatedelectron gas theoryen
dc.subject.translatedlinear equivalent circuiten
dc.subject.translatedsemiconductor parametersen
dc.type.statusPeer-revieweden
Appears in Collections:CPEE – AMTEE 2007
CPEE – AMTEE 2007

Files in This Item:
File Description SizeFormat 
Kosek.pdfPlný text443,89 kBAdobe PDFView/Open


Please use this identifier to cite or link to this item: http://hdl.handle.net/11025/25788

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.