Full metadata record
| DC pole | Hodnota | Jazyk |
|---|---|---|
| dc.contributor.author | Očenášek, Jiří | |
| dc.contributor.editor | Pinker, Jiří | |
| dc.date.accessioned | 2021-10-29T05:41:33Z | |
| dc.date.available | 2021-10-29T05:41:33Z | |
| dc.date.issued | 2021 | |
| dc.identifier.citation | 2021 International Conference on Applied Electronics: Pilsen, 7th – 8th September 2021, Czech Republic, p. 115-118. | en |
| dc.identifier.isbn | 978–80–261–0972–3 (Print) | |
| dc.identifier.isbn | 978–80–261–0973–0 (Online) | |
| dc.identifier.issn | 1803–7232 (Print) | |
| dc.identifier.issn | 1805–9597 (Online) | |
| dc.identifier.uri | http://hdl.handle.net/11025/45577 | |
| dc.description.sponsorship | OP VVV Electrical Engineering Technologies with High-Level of Embedded Intelligence CZ.02.1.01/0.0/0.0/18_069/0009855, project SGS-2021-021 | en |
| dc.format | 4 s. | cs |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en | en |
| dc.publisher | University of West Bohemia | en |
| dc.rights | © University of West Bohemia, 2021 | en |
| dc.subject | usměrňovač | cs |
| dc.subject | silikon | cs |
| dc.subject | karbid | cs |
| dc.subject | napájení | cs |
| dc.subject | Schottky | cs |
| dc.subject | dioda | cs |
| dc.title | Parameter Calculations for SiC Three-Phase Rectifier | en |
| dc.type | conferenceObject | en |
| dc.type | konferenční příspěvek | cs |
| dc.rights.access | openAccess | en |
| dc.type.version | publishedVersion | en |
| dc.description.abstract-translated | Main focus of this work is to design a three–phase rectifier based on silicon–carbide power diodes. Main part of the article is dedicated do equations which are then used to obtain temperatures of power diode junction based on current, voltage and switching frequency. From these, power losses are calculated. Combined with selection of cooling heat sink, final temperatures are obtained. There were two methods used. One simplified equation, neglecting shape of forward current to calculate forward losses and the second where the shape of current is acknowledged and calculated with. Final values are then reviewed via simulation. | en |
| dc.subject.translated | rectifier | en |
| dc.subject.translated | silicon | en |
| dc.subject.translated | carbide | en |
| dc.subject.translated | power | en |
| dc.subject.translated | Schottky | en |
| dc.subject.translated | diode | en |
| dc.type.status | Peer-reviewed | en |
| Vyskytuje se v kolekcích: | Konferenční příspěvky / Conference Papers (KEV) Applied Electronics 2021 Applied Electronics 2021 | |
Soubory připojené k záznamu:
| Soubor | Popis | Velikost | Formát | |
|---|---|---|---|---|
| Parameter_Calculations_for_SiC_Three-Phase_Rectifier.pdf | Plný text | 712,53 kB | Adobe PDF | Zobrazit/otevřít |
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