Title: Temperature-Dependent Hall Effect Studies of AZO Thin Films
Authors: Nedvědová, Lucie
Novák, Petr
Jansa, Zdeněk
Minár, Jan
Citation: NEDVĚDOVÁ, L. NOVÁK, P. JANSA, Z. MINÁR, J. Temperature-Dependent Hall Effect Studies of AZO Thin Films. In 26th International Conference on Applied Physics of Condensed Matter (APCOM). Strbske Pleso: AIP Conference Proceedings, 2021. s. nestránkováno. ISBN: 978-0-7354-4138-5 , ISSN: 0094-243X
Issue Date: 2021
Publisher: AIP Conference Proceedings
Document type: konferenční příspěvek
URI: 2-s2.0-85118859139
ISBN: 978-0-7354-4138-5
ISSN: 0094-243X
Keywords in different language: DOPED ZNO
Abstract in different language: Understanding of how the defects interact with each other and affect the properties of ZnO:Al thin films is one of great importance for improving their performance as a transparent conductive oxide. In the present work we studied the effect of annealing on the carrier concentration and Hall mobility of under-stoichiometric ZnO:Al films. Samples have been deposited by magnetron rf and dc co-sputtering from ceramic and metallic targets with the same Zn(98%)/Al(2%) concentration. Raman spectra taken prior and after temperature-dependent Hall measurements, fulfilled the understanding of the mosaic of defect changes.
Rights: Plný text není přístupný.
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Appears in Collections:Konferenční příspěvky / Conference papers (RAM)

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