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dc.contributor.authorNafday, Dhani
dc.contributor.authorRichter, Christine
dc.contributor.authorHeckmann, Olivier
dc.contributor.authorWang, Weimin
dc.contributor.authorMariot, Jean-Michel
dc.contributor.authorDjukic, Uros
dc.contributor.authorVobornik, Ivana
dc.contributor.authorLefevre, Patrick
dc.contributor.authorTaleb-Ibrahimi, Amina
dc.contributor.authorBertran, Franco̧is
dc.contributor.authorRault, Julien
dc.contributor.authorNicolai, Laurent Christophe
dc.contributor.authorOng, Chin Shen
dc.contributor.authorThunström, Patrik
dc.contributor.authorHricovini, Karol
dc.contributor.authorMinár, Jan
dc.contributor.authorDi Marco, Igor
dc.date.accessioned2023-09-04T10:00:24Z-
dc.date.available2023-09-04T10:00:24Z-
dc.date.issued2023
dc.identifier.citationNAFDAY, D. RICHTER, CH. HECKMANN, O. WANG, W. MARIOT, J. DJUKIC, U. VOBORNIK, I. LEFEVRE, P. TALEB-IBRAHIMI, A. BERTRAN, F. RAULT, J. NICOLAI, LCH. ONG, CHS. THUNSTRÖM, P. HRICOVINI, K. MINÁR, J. DI MARCO, I. Electronic structure of Bi nanolines on InAs(100). APPLIED SURFACE SCIENCE, 2023, roč. 611, č. FEB 15 2023, s. nestránkováno. ISSN: 0169-4332cs
dc.identifier.issn0169-4332
dc.identifier.uri2-s2.0-85141749528
dc.identifier.urihttp://hdl.handle.net/11025/53903
dc.format
dc.format8 s.cs
dc.format.mimetypeapplication/pdf
dc.language.iso
dc.language.isoenen
dc.publisherElsevieren
dc.relation.ispartofseriesApplied Surface Scienceen
dc.rights© The Author(s)en
dc.titleElectronic structure of Bi nanolines on InAs(100)en
dc.typečlánekcs
dc.typearticleen
dc.rights.accessopenAccessen
dc.type.versionpublishedVersionen
dc.description.abstract-translatedSelf-assembled nanolines are attractive to build the technological devices of next generation, but characterizing their electronic properties is often difficult to achieve. In this work we employ angle-resolved photoemission spectroscopy and density functional theory to clarify the electronic structure exhibited by self-assembled Bi nanolines grown on the InAs(100) surface. A surface resonance associated to the reconstructed ζ(4 × 2) surface is visible in the photoemission spectra before and after the formation of the Bi nanolines. This demonstrates that Bi deposition does not necessarily drive a transition to an unreconstructed surface in the substrate, which is contrary to what was reported in previous studies. In addition, experiment and theory show the presence of a flat band located in the band gap of InAs, just above the valence band maximum. This flat band is associated to the Bi nanolines and possesses a strong orbital character, consistent with its unidimensional nature. These spectral features suggest that Bi nanolines on InAs(100) may have a strongly polarized conductivity, which makes them suitable to be exploited as nanowires in nanotechnology. The coexistence with an accumulation layer suggests an even farther functionalization.en
dc.subject.translatedelectronic band structureen
dc.subject.translatedsurface statesen
dc.subject.translatedphotoemsissionen
dc.subject.translatedthin filmen
dc.subject.translatedreconstructed surfaceen
dc.identifier.doi10.1016/j.apsusc.2022.155436
dc.type.status
dc.type.statusPeer-revieweden
dc.identifier.document-number906886000001
dc.identifier.obd43940066
dc.project.IDEF15_003/0000358/Výpočetní a experimentální design pokročilých materiálů s novými funkcionalitamics
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