Title:	The influence of TiW and Ti-TiN interface layers on power transistor parameters
Authors:	Áč, Vladimír Sumega, Miroslav
Citation:	Electroscope, 2009, Konference EDS 2009.
Issue Date:	2009
Publisher:	Západočeská univerzita v Plzni, Fakulta elektrotechnická
Document type:	článek konferenční příspěvek article conferenceObject
URI:	http://147.228.94.30/images/PDF/Rocnik2009/EDS_2009/ac.pdf http://hdl.handle.net/11025/549
ISSN:	1802-4564
Keywords:	výkonové tranzistory;pokovování;TiW;Ti-TiN;elektrotechnická diagnostika
Keywords in different language:	power transistors;metallization;electrical diagnostics;TiW;Ti-TiN
Abstract in different language:	The power MOS transistors were tested with different diffusion barrier type used in metallization contact stack. The contact structure in integrated circuit (IC) needs to have good ohmic properties with low contact resistance and it needs to be thermodynamically stable to prevent contact degradation. Because high current operation the power transistors in IC should be most sensitive parts for barrier stability testing. The PtSi-TiW-AlCu metallization technology will by compared with PtSi-Ti-TiN-AlCu metallization. Generally, the TiW diffusion barrier has lower thermodynamic stability with AlCu metallization compare to TiN. Therefore a Ti-TiN barrier implementation could be attractive for manufacturing using TiW barrier technology. It will be interesting to test the RON (transistor resistance in switch ON state), gate threshold voltage and leakage current parameters on power MOS transistors because the barrier changes. The barrier and aluminium-copper interface will be compared on the SEM cross-sections samples.
Rights:	Copyright © 2007-2010 Electroscope. All Rights Reserved.
Appears in Collections:	EDS 2009 (2009)

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