| Title: | Měření průběhu napětí UDS tranzistorů na bázi nitridu gallia ve výkonových obvodech měničů |
| Other Titles: | Measuring the drain-to-source voltage of transistors based on nitride gallium in power converter circuits |
| Authors: | Novák, Radek |
| Citation: | FIŘT, Jaroslav ed. Elektrotechnika a informatika: XVIII. ročník konference doktorských prací Zámek Nečtiny, 26. – 27. října 2017. Vyd. 1. Plzeň: Západočeská univerzita v Plzni, 2017, s. [115-119]. |
| Issue Date: | 2017 |
| Publisher: | Západočeská univerzita v Plzni |
| Document type: | konferenční příspěvek conferenceObject |
| URI: | http://hdl.handle.net/11025/26464 |
| ISBN: | 978–80–261–0712–5 |
| Keywords: | nitrid gallia;vysoký tranzistor elektronové mobility;doba náběhu;pokles času |
| Keywords in different language: | nitride gallium;high electron mobility transistor;rise time;fall time |
| Abstract in different language: | The article is about selecting a suitable voltage oscilloscopic probe for measuring the drain-to-source voltage of GaN E-HEMT (Enhancement – High Electron Mobility Transistor) power transistors mounted in power converter circuits. Successful measuring depends on knowing the parameters of the transistor, the power circuit and the gate circuit. Because of the voltage in the power circuit (up to 600 V) our selection is restricted to high-voltage passive probes. GaN E-HEMT transistors with fast switching (lasting several ns) and the response time of the measuring system must correspond to this. The uncertainty of measuring is discussed in the conclusion of the article. |
| Rights: | © Západočeská univerzita v Plzni |
| Appears in Collections: | 2017 2017 |
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