Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Al-Jaary, Ali H. Reshak | |
dc.contributor.author | Azam, Sikander | |
dc.date.accessioned | 2018-02-21T11:35:26Z | - |
dc.date.available | 2018-02-21T11:35:26Z | - |
dc.date.issued | 2014 | |
dc.identifier.citation | AL-JAARY, A., AZAM, S. The electronic structure, electronic charge density and optical properties of the diamond-like semiconductor Ag2ZnSiS4. Applied Physics A-Materials Science & Processing, 2014, roč. 116, č. 1, s. 333-340. ISSN 0947-8396. | en |
dc.identifier.issn | 0947-8396 | |
dc.identifier.uri | http://hdl.handle.net/11025/29278 | |
dc.description.abstract | Elektronická struktura, elektronická hustota náboje a optické vlastnosti podobné diamantu polovodiče Ag2ZnSiS4 monoklinické struktury byly zkoumány pomocí metod full-relativistic version of the full-potential augmented plane-wave, local density approximation (LDA), generalized gradient approximation (GGA), Engel–Vosko GGA (EVGGA) a modified Becke Johnson (mBJ). | cs |
dc.format | 8 s. | cs |
dc.format.mimetype | application/pdf | |
dc.language.iso | en | en |
dc.publisher | Springer Verlag | en |
dc.rights | Plný text není přístupný. | cs |
dc.rights | © Springer Verlag | en |
dc.subject | elektronická struktura | cs |
dc.subject | elektronická hustota náboje | cs |
dc.subject | optické vlastnosti | cs |
dc.title | Elektronická struktura, elektronická a optická hustota náboje vlastnosti podobné diamantu polovodičového Ag2ZnSiS4 | cs |
dc.title | The electronic structure, electronic charge density and optical properties of the diamond-like semiconductor Ag2ZnSiS4 | en |
dc.type | článek | cs |
dc.type | article | en |
dc.rights.access | closedAccess | en |
dc.type.version | publishedVersion | en |
dc.description.abstract-translated | The electronic structure, electronic charge density and optical properties of the diamond-like semiconductor Ag2ZnSiS4 compound with the monoclinic structure have been investigated using a full-relativistic version of the full-potential augmented plane-wave method based on the density functional theory, within local density approximation (LDA), generalized gradient approximation (GGA), Engel–Vosko GGA (EVGGA) and modified Becke Johnson (mBJ) potential. | en |
dc.subject.translated | electronic structure | en |
dc.subject.translated | electronic charge density | en |
dc.subject.translated | optical properties | en |
dc.identifier.doi | 10.1007/s00339-013-8126-0 | |
dc.type.status | Peer-reviewed | en |
dc.identifier.obd | 43919757 | |
dc.project.ID | ED2.1.00/03.0088/Centrum nových technologií a materiálů (CENTEM) | cs |
Appears in Collections: | Články / Articles (CTM) OBD |
Files in This Item:
File | Size | Format | |
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Ali-Ag2ZnSiS4-2014.pdf | 1,86 MB | Adobe PDF | View/Open Request a copy |
Please use this identifier to cite or link to this item:
http://hdl.handle.net/11025/29278
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