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dc.contributor.authorAl-Jaary, Ali H. Reshak
dc.contributor.authorAzam, Sikander
dc.date.accessioned2018-02-21T11:35:26Z-
dc.date.available2018-02-21T11:35:26Z-
dc.date.issued2014
dc.identifier.citationAL-JAARY, A., AZAM, S. The electronic structure, electronic charge density and optical properties of the diamond-like semiconductor Ag2ZnSiS4. Applied Physics A-Materials Science & Processing, 2014, roč. 116, č. 1, s. 333-340. ISSN 0947-8396.en
dc.identifier.issn0947-8396
dc.identifier.urihttp://hdl.handle.net/11025/29278
dc.description.abstractElektronická struktura, elektronická hustota náboje a optické vlastnosti podobné diamantu polovodiče Ag2ZnSiS4 monoklinické struktury byly zkoumány pomocí metod full-relativistic version of the full-potential augmented plane-wave, local density approximation (LDA), generalized gradient approximation (GGA), Engel–Vosko GGA (EVGGA) a modified Becke Johnson (mBJ).cs
dc.format8 s.cs
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherSpringer Verlagen
dc.rightsPlný text není přístupný.cs
dc.rights© Springer Verlagen
dc.subjectelektronická strukturacs
dc.subjectelektronická hustota nábojecs
dc.subjectoptické vlastnostics
dc.titleElektronická struktura, elektronická a optická hustota náboje vlastnosti podobné diamantu polovodičového Ag2ZnSiS4cs
dc.titleThe electronic structure, electronic charge density and optical properties of the diamond-like semiconductor Ag2ZnSiS4en
dc.typečlánekcs
dc.typearticleen
dc.rights.accessclosedAccessen
dc.type.versionpublishedVersionen
dc.description.abstract-translatedThe electronic structure, electronic charge density and optical properties of the diamond-like semiconductor Ag2ZnSiS4 compound with the monoclinic structure have been investigated using a full-relativistic version of the full-potential augmented plane-wave method based on the density functional theory, within local density approximation (LDA), generalized gradient approximation (GGA), Engel–Vosko GGA (EVGGA) and modified Becke Johnson (mBJ) potential.en
dc.subject.translatedelectronic structureen
dc.subject.translatedelectronic charge densityen
dc.subject.translatedoptical propertiesen
dc.identifier.doi10.1007/s00339-013-8126-0
dc.type.statusPeer-revieweden
dc.identifier.obd43919757
dc.project.IDED2.1.00/03.0088/Centrum nových technologií a materiálů (CENTEM)cs
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