| Title: | Elektronická struktura, elektronická a optická hustota náboje vlastnosti podobné diamantu polovodičového Ag2ZnSiS4 The electronic structure, electronic charge density and optical properties of the diamond-like semiconductor Ag2ZnSiS4 |
| Authors: | Al-Jaary, Ali H. Reshak Azam, Sikander |
| Citation: | AL-JAARY, A., AZAM, S. The electronic structure, electronic charge density and optical properties of the diamond-like semiconductor Ag2ZnSiS4. Applied Physics A-Materials Science & Processing, 2014, roč. 116, č. 1, s. 333-340. ISSN 0947-8396. |
| Issue Date: | 2014 |
| Publisher: | Springer Verlag |
| Document type: | článek article |
| URI: | http://hdl.handle.net/11025/29278 |
| ISSN: | 0947-8396 |
| Keywords: | elektronická struktura;elektronická hustota náboje;optické vlastnosti |
| Keywords in different language: | electronic structure;electronic charge density;optical properties |
| Abstract: | Elektronická struktura, elektronická hustota náboje a optické vlastnosti podobné diamantu polovodiče Ag2ZnSiS4 monoklinické struktury byly zkoumány pomocí metod full-relativistic version of the full-potential augmented plane-wave, local density approximation (LDA), generalized gradient approximation (GGA), Engel–Vosko GGA (EVGGA) a modified Becke Johnson (mBJ). |
| Abstract in different language: | The electronic structure, electronic charge density and optical properties of the diamond-like semiconductor Ag2ZnSiS4 compound with the monoclinic structure have been investigated using a full-relativistic version of the full-potential augmented plane-wave method based on the density functional theory, within local density approximation (LDA), generalized gradient approximation (GGA), Engel–Vosko GGA (EVGGA) and modified Becke Johnson (mBJ) potential. |
| Rights: | Plný text není přístupný. © Springer Verlag |
| Appears in Collections: | Články / Articles (CTM) OBD |
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