| Title: | Fabrication and Characterization of a p-AgO/PSi/n-Si Heterojunction for Solar Cell Applications |
| Other Titles: | Výroba a charakteristika p-AgO/PSi/n-Si heterizace pro aplikaci u solárních článků |
| Authors: | Habubi, Nadir F. Abd, Ahmed N. Dawood, Mohammed O. Al-Jaary, Ali H. Reshak |
| Citation: | HABUBI, N. F., ABD, A. N., DAWOOD, M. O., AL-JAARY, A. H. R. Fabrication and Characterization of a p-AgO/PSi/n-Si Heterojunction for Solar Cell Applications. Silicon, 2018, roč. 10, č. 2, s. 371-376. ISSN 1876-990X. |
| Issue Date: | 2018 |
| Publisher: | Springer |
| Document type: | článek article |
| URI: | 2-s2.0-84988383404 http://hdl.handle.net/11025/31120 |
| ISSN: | 1876-990X |
| Keywords: | AgO;tepelná oxidace;Lifetime;Hetero Diode;XRD;AFM;SEM |
| Keywords in different language: | AgO;Thermal oxidation;Lifetime;Heterodiode;XRD;AFM;SEM |
| Abstract: | P-AgO / psi / n-Si heterojunction byl vyroben pomocí vysokého vakua tepelným odpařováním stříbra a podrobením tepelné oxidaci při 300 ◦C porézního křemíku. |
| Abstract in different language: | A p-AgO/PSi/n-Si heterojunction was deposited by high vacuum thermal evaporation of silver subjected to thermal oxidation at 300 ◦C on porous silicon. |
| Rights: | Plný text není přístupný. © Springer |
| Appears in Collections: | Články / Articles (CTM) OBD |
Files in This Item:
| File | Size | Format | |
|---|---|---|---|
| Ali-p-Ago-Silicon-16.pdf | 1,31 MB | Adobe PDF | View/Open Request a copy |
Please use this identifier to cite or link to this item:
http://hdl.handle.net/11025/31120Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.