Title: | Fully spin-polarized bulk states in ferroelectric GeTe |
Authors: | Krempaský,, Juraj Fanciulli, Mauro Nicolai, Laurent Christophe Minár, Jan Volfová, Henrieta Caha, Ondřej Volobuev, Valentine V. Sánchez-Barriga, Jaime Gmitra, Martin Yaji, Koichiro Kuroda, Kenta Shin, Shik Komori, Fumio Springholz, Gunther Dil, J. Hugo |
Citation: | KREMPASKÝ, J., FANCIULLI, M., NICOLAI, LCH., MINÁR, J., VOLFOVÁ, H., CAHA, O., VOLOBUEV, VV., SÁNCHEZ-BARRIGA, J., GMITRA, M., YAJI, K., KURODA, K., SHIN, S., KOMORI, F., SPRINGHOLZ, G., DIL, JH. Fully spin-polarized bulk states in ferroelectric GeTe. Physical Review Research, 2020, roč. 2, č. 1. ISSN 2643-1564. |
Issue Date: | 2020 |
Publisher: | American Physical Society |
Document type: | článek article |
URI: | http://hdl.handle.net/11025/44915 |
ISSN: | 2643-1564 |
Keywords in different language: | TEXTURE |
Abstract in different language: | By measuring the spin polarization of GeTe films as a function of light polarization we observed that the bulk states are fully spin polarized in the initial state, in strong contrast with observations for other systems with a strong spin-orbit interaction and the surface derived states in the same system. In agreement with state-of-the-art theory, our experimental results show that fully spin-polarized bulk states are an intrinsic property of the ferroelectric Rashba semiconductor alpha-GeTe(111). The fact that the measured spin-polarization vector does not change with light polarization can be explained by the absence of a mixing of states with a different total angular momentum J. |
Rights: | © American Physical Society |
Appears in Collections: | Články / Articles (RAM) OBD |
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Minar_KFN+20_bulk_spin_pol_100per_GeTe.pdf | 3,87 MB | Adobe PDF | View/Open |
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