| Title: | Parameter calculations for SiC three-phase rectifier |
| Authors: | Očenášek, Jiří |
| Citation: | OČENÁŠEK, J. Parameter calculations for SiC three-phase rectifier. In International Conference on Applied Electronics (AE 2021) : /proceedings/. Pilsen: University of West Bohemia, 2021. s. 115-118. ISBN: 978-80-261-0972-3 , ISSN: 1803-7232 |
| Issue Date: | 2021 |
| Publisher: | University of West Bohemia |
| Document type: | konferenční příspěvek ConferenceObject |
| URI: | 2-s2.0-85116438819 http://hdl.handle.net/11025/46745 |
| ISBN: | 978-80-261-0972-3 |
| ISSN: | 1803-7232 |
| Keywords in different language: | rectifier;silicon;carbide;power;Schottky;diode |
| Abstract in different language: | Main focus of this work is to design a three–phase rectifier based on silicon–carbide power diodes. Main part of the article is dedicated do equations which are then used to obtain temperatures of power diode junction based on current, voltage and switching frequency. From these, power losses are calculated. Combined with selection of cooling heat sink, final temperatures are obtained. There were two methods used. One simplified equation, neglecting shape of forward current to calculate forward losses and the second where the shape of current is acknowledged and calculated with. Final values are then reviewed via simulation. |
| Rights: | © University of West Bohemia |
| Appears in Collections: | Konferenční příspěvky / Conference Papers (KEV) OBD |
Files in This Item:
| File | Size | Format | |
|---|---|---|---|
| Ocenasek_Parameter.pdf | 715,31 kB | Adobe PDF | View/Open |
Please use this identifier to cite or link to this item:
http://hdl.handle.net/11025/46745Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.