Title: | Effect of the gate electrode/electrolyte interface on OECT performance |
Authors: | Šlauf, Josef Řeboun, Jan |
Citation: | ŠLAUF, J. ŘEBOUN, J. Effect of the gate electrode/electrolyte interface on OECT performance. In 2022 45th International Spring Seminar on Electronics Technology : /proceedings/. Piscaway: IEEE, 2022. s. 1-5. ISBN: 978-1-66546-589-2 , ISSN: 2161-2536 |
Issue Date: | 2022 |
Publisher: | IEEE |
Document type: | konferenční příspěvek ConferenceObject |
URI: | 2-s2.0-85134221087 http://hdl.handle.net/11025/49738 |
ISBN: | 978-1-66546-589-2 |
ISSN: | 2161-2536 |
Keywords in different language: | ionic liquid;OECT;PEDOT:PSS;transistor;transconductance |
Abstract: | An organic electrochemical transistor (OECT) with a standard vertical topology and poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as the active material of the channel is presented. It was found that the specific combination of the gate electrode material and electrolyte influences the transistor behavior. The effect of the different gate electrode/electrolyte interface on transistor performance were investigated by measuring the current-voltage characteristics, specifically the output and transfer characteristics, and the time-current dynamic characteristics. The influence of the type of the gate electrode/electrolyte interface on typical transistor parameters such as transconductance, ION/IOFF ratio and modulation response time (tON,tOFF) is also discussed. |
Abstract in different language: | An organic electrochemical transistor (OECT) with a standard vertical topology and poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as the active material of the channel is presented. It was found that the specific combination of the gate electrode material and electrolyte influences the transistor behavior. The effect of the different gate electrode/electrolyte interface on transistor performance were investigated by measuring the current-voltage characteristics, specifically the output and transfer characteristics, and the time-current dynamic characteristics. The influence of the type of the gate electrode/electrolyte interface on typical transistor parameters such as transconductance, ION/IOFF ratio and modulation response time (tON,tOFF) is also discussed. |
Rights: | Plný text je přístupný v rámci univerzity přihlášeným uživatelům. © IEEE |
Appears in Collections: | Konferenční příspěvky / Conference Papers (KET) Konferenční příspěvky / Conference papers (RICE) OBD |
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