Title: | Waffle MOS channel aspect ratio calculation with Schwarz-Christoffel transformation |
Authors: | Vacula, Patrik Husák, Miroslav |
Citation: | Electroscope. 2013, č. 5, EEICT + EDS. |
Issue Date: | 2013 |
Publisher: | Západočeská univerzita v Plzni, Fakulta elektrotechnická |
Document type: | článek article |
URI: | http://ek702p10-ket.fel.zcu.cz/images/PDF/Rocnik2013/Cislo5_2013/r7c5c11.pdf http://hdl.handle.net/11025/6626 |
ISSN: | 1802-4564 |
Keywords: | Schwarz-Christoffelova transformace;numerické modelování;tranzistory MOS;MOS kanál |
Keywords in different language: | Schwarz-Christoffel transformation;numerical modelling;MOS transistors;MOS channel |
Abstract in different language: | The main goal of this work is to describe alternative way of effective channel width to length (W/L) ratio calculation for Waffle MOS structure. Due to non-conventional gate geometry of the Waffle MOS transistor compare to the fingers structure, the channel W/L ratio calculation is not trivial and conformal mapping can be used. In terms of mapping the Schwarz-Christoffel (SC) Transformation is proposed. The optimal element shape of the Waffle MOS is proposed, to be easy solved by SC conformal mapping. Because result of the conformal mapping for the Waffle MOS element is rectangle shape in transformed domain, the solving of the effective channel W/L ratio of the element is become very easy because it is aspect ratio of rectangle in transformed domain. |
Rights: | © 2013 Electroscope. All rights reserved. |
Appears in Collections: | Číslo 5 (2013) Číslo 5 (2013) |
Files in This Item:
File | Description | Size | Format | |
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r7c5c12.pdf | Plný text | 633,04 kB | Adobe PDF | View/Open |
Please use this identifier to cite or link to this item:
http://hdl.handle.net/11025/6626
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