Title: | Oxidation of sputtered Cu films during thermal annealing in flowing air |
Authors: | Šašek, Martin Zeman, Petr Musil, Jindřich |
Citation: | XXVIII International conference on phenomena in ionized gases: July 15-20, 2007, Prague, Czech Republic: proceedings. Praha: Institute of Plasma Physics AS CR, 2007, p. 711-712. |
Issue Date: | 2007 |
Publisher: | Institute of Plasma Physics AS CR |
Document type: | konferenční příspěvek conferenceObject |
URI: | http://icpig2007.ipp.cas.cz/files/download/cd-cko/ICPIG2007/pdf/2P13-24.pdf http://hdl.handle.net/11025/1438 |
ISBN: | 978-80-87026-01-4 |
Keywords: | tenké vrstvy;magnetronové naprašování;termogravimetrie;měď;oxidace |
Keywords in different language: | thin films;magnetron sputtering;thermogravimetry;copper;oxidation |
Abstract: | The article deals with oxidation of Cu films during post-deposition thermal annealing in flowing air. Cu films were sputtered from a pure Cu target in Ar using dc unbalanced magnetron. The copper oxide films formed during post-deposition thermal annealing were compared with CuOx films sputtered from Cu target in the mixture of Ar and O2. The oxidation behavior of the films was characterized by high-temperature thermogravimetry and X-ray diffraction (XRD). Thermal annealing was carried out in a wide range of temperatures from 300 to 1300°C. It was found that the CuO oxide decomposes into Cu2O+O at ~1040° C. |
Rights: | © Jindřich Musil, Martin Šašek, Petr Zeman |
Appears in Collections: | Konferenční příspěvky / Conference Papers (KFY) |
Files in This Item:
File | Description | Size | Format | |
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2P13-24.pdf | 400,34 kB | Adobe PDF | View/Open |
Please use this identifier to cite or link to this item:
http://hdl.handle.net/11025/1438
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