Název: Highly Sensitive Room-Temperature Ammonia Sensors Based on Single-Wall Carbon Nanotubes Modified by PEDOT
Autoři: Štulík, Jiří
Šlauf, Josef
Polanský, Radek
Mergl, Martin
Kalbáč, Martin
Citace zdrojového dokumentu: ŠTULÍK, J. ŠLAUF, J. POLANSKÝ, R. MERGL, M. KALBÁČ, M. Highly Sensitive Room-Temperature Ammonia Sensors Based on Single-Wall Carbon Nanotubes Modified by PEDOT. IEEE SENSORS JOURNAL, 2022, roč. 22, č. 4, s. 3024-3032. ISSN: 1530-437X
Datum vydání: 2022
Nakladatel: IEEE
Typ dokumentu: článek
article
URI: 2-s2.0-85123368389
http://hdl.handle.net/11025/47646
ISSN: 1530-437X
Klíčová slova v dalším jazyce: PEDOT;carbon nanotubes;sulfonic group;ammonia;gas sensor
Abstrakt v dalším jazyce: An ammonia gas sensor material based on sulfonic functionalized single-wall carbon nanotubesmodified by poly(3,4-ethylenedioxythiophene), namely, PEDOT/SWCNTSO3H, was prepared via in situ polymerization. A thin active layer of PEDOT/SWCNT-SO3H was deposited on a polyimide substrate with interdigital electrodes by air-brush spray coating. The morphology of the prepared material was studied by scanning electron microscopy, and the presence of PEDOT in the structure of SWCNT-SO3H was examined with Raman spectroscopy. The obtained results showed that PEDOT was successfully bound to SWCNT-SO3H and that this modification significantly improved the NH3 sensing performance of the sensor. The sensor exhibited a strong response to ammonia (102% at 50 ppm),minimal drift in the electrical resistance during cyclic exposure, and good spontaneous desorption, all at room temperature. In the range from 20 ppm to 100 ppm ammonia, the calibration curve is considered linear, with a sensitivity of a 0.7% resistance change per 1 ppm ammonia. Furthermore, the sensor shows the ability to detect ammonia at sub-ppm concentration, and the response is 4.4% at 300 ppb. With regard to the material structure, the sensing mechanisms of both materials, i.e., PEDOT/SWCNT-SO3H and SWCNT-SO3H, are discussed in the article.
Práva: Plný text je přístupný v rámci univerzity přihlášeným uživatelům.
© IEEE
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